FDG329N datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V
* Fast switching speed
* Low gate charge (3.3 nC typical)
* High performance .

Application

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* DC/DC converter Power management Load switch S D D G Pin 1 1 2 D D 6 5 4 SC70-6 3 Absolute Maxim.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extre.

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